Fully ion-implanted InP JFET with buried p-layer

Ultrafast trapping times in ion implanted InP

An ion-implanted InP receiver for polarization resolved terahertz spectroscopy.

We report on the construction, optical alignment and performance of a receiver which is capable of recording the full polarization state of coherent terahertz radiation. The photoconductive detector was fabricated on InP which had been implanted with Fe(+) ions. The device operated successfully when it was gated with near infrared femtosecond pulses from either a Ti:sapphire laser oscillator or...

Advanced InP Heterojunction Bipolar Transistors with Implanted Subcollector

We present the results of an InP HBT device development process. We have developed a new HBT device fabrication approach that represents a major departure from traditional compound semiconductor manufacturing techniques. The new generation of deep submicron InP-based HBTs presented here uses an ion implanted subcollector and offers significantly improved performance, integration, and device rel...

High temperature rapid thermal annealing of phosphorous ion implanted InAs/ InP quantum dots

The effect of high temperature annealing of the InAs/ InP quantum dots QDs containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence PL intensity and reduced PL linewidth. The effect of high energy 450 keV...

Electrically active defects in as-implanted, deep buried layers in p-type silicon

We have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy ~DLTS! and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode ~CC-TATS!. We show that CC-TATS is a more reliable method than DLTS for characterization of the hea...